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Transparent and electrically conductive (TCO) thin films of ZnO:Al, ZnO:Ga and ZnO:Sc, used in solar cells as well as optoelectronic devices, have been successfully deposited by rf magnetron sputter deposition using ZnO(98%) / X2O3(2%) ceramic target, X ∈{Al, Ga, Sc}, in the inert atmosphere of argon. In this contribution we focused on the changes in physical properties and their comparison in dependence...
Boron-doped p-type nanocrystalline diamond (NCD) films were grown by microwave plasma chemical vapor deposition (MPCVD) method via introduction of the gas mixtures of methane, hydrogen and diborane. The effects of B/C ratios of gas mixtures on the electrical properties of NCD films were investigated by Hall effect measurement system. N-type ZnO films were prepared on NCD films by radio-frequency (RF)...
ZnO thin films have been deposited on (0001) sapphire substrates using potassium (K) as a dopant by radio frequency magnetron sputtering technique. The electrical properties, crystallinity and surface morphology of as-grown ZnO films are investigated by Hall measurement, X-ray diffraction and atom force microscopy. Results show that the structure and electrical properties of p-K:ZnO films are strongly...
Al-doped ZnO thin films as a front electrode of silicon pin solar cells were prepared on the glass substrates by rf magnetron sputtering in which working pressure and substrate temperature were controlled precisely. After film deposition, the films were etched by dilute acid solution to obtain the textured surfaces. Material properties of the deposited films were investigated by various analytical...
We investigated the optical and electrical properties of amorphous InZnO (IZO) as a potential replacement of Al-doped ZnO (AZO) conducting window layer for CuInGaSe2 (CIGS) solar cells. The device performance of CIGS devices with IZO of different thickness and sheet resistance was compared with that of CIGS standard devices with AZO. The results show that the optical and electrical properties of IZO...
In-N co-doped P-type ZnO films were prepared on SiO2 and glass substrates by IBED method. The structural, optical and electrical properties were characterized by XRD, XPS, AFM and Hall test. The tests results show that the film was polycrystalline with a preferred (002) orientation. The resistivity, mobility and carrier concentration was 1.6times10-3 Omegamiddotcm, 35.9 cm2/VmiddotS and 1.66times10...
We report the zinc oxide (ZnO) nanowires with ultra-thin seed layer by low-cost hydrothermal method. The ultra-thin seed layer consists of ZnO thin film, which is fabricated by sol-gel method and then etched to reduce the thickness by diluted HCI. The resistance along the vertical direction of the ultra-thin seed layer on the indium tin oxide (ITO) glass decreases during the etching process. ZnO nanowires...
Summary form only given. New model of a DC arc plasmatron was developed. It was used for deposition of thin ZnO and Al2O3 films on the inner walls of acryl tubes. Deposition was done on the air. Tubes with inner diameter of 60 mm were used. The special construction of the plasmatron allows depositing films on plastic substrate because of low heating. Substrate temperature didn't exceed 40degC during...
The thermal evaporation deposition technique was used to produce zinc oxide thin film onto p-type silicon substrate at room temperature. The prepared film was post annealed at different temperature from 400 to 800degC in O2 ambient atmosphere for 20 minutes. The effect of post annealing temperature on the structural properties and surface morphological of ZnO thin films have been studied by XRD and...
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