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Cubic silicon carbide (3C-SiC) has received a great deal of attention since it is a suitable material for electronic and MEMS devices operating in harsh environments. But difficulties still exist in realizing high throughput of high quality material. In the present paper, 3C-SiC layers have been grown on Si(111) in a vertical multi-wafer WCVD (Warm-wall Chemical Vapor Deposition) reactor with a rotating...
Large band gap materials such as diamond (5.5 eV) and AlN (6 eV) offer the possibility of making MEMS structures out of a single material by varying the doping level to achieve the semi-conducting, metallic and insulating (undoped) properties needed in a typical MEMS structure. Polycrystalline diamond (poly-C), which has recently been used in the fabrication of BioMEMS, RFMEMS, and MEMS packaging,...
The effects of growth conditions on the morphology of ZnO nanostructures grown by CVD process with Au catalyst were systemically studied and the key factors controlling growth were identified. Two growth modes of ZnO formation were observed: self-catalyzed growth on Si substrate and gas-phase nucleation and growth. In the former case, the ZnO nanostructures grow by the vapor-solid mechanism and the...
Thin film ZnO/Si heterojunction solar cells were explored for their potentially low cost application. Microcrystalline silicon (??c-Si) deposited by metal induced growth (MIG) demonstrated viable photo response as a thin film base layer. Modeling using AMPS-1D was performed on various heterostructures. In thin film devices, Interface defects of 8.8??1011 1/cm2-eV were shown to significantly reduce...
Polycrystal 3C-SiC films have been grown on Si/SiN structures via atmospheric pressure chemical vapor deposition (APCVD) process with a SiH4-C3H8-H2 reaction gas system. The change of SiN microstructure during high temperature pretreatment, and its effect on the crystallinities of SiC growth films were measured using SEM and XRD. Experiment results show that high temperature pretreatment of substrates??...
This paper presents the growth conditions and characteristics of polycrystalline (poly) 3C-SiC thin films for micro/nano-electromechaical systems (M/NEMS) applications. The growth of the poly 3C-SiC thin film on oxided Si wafers was accomplished by APCVD using single precursor hexamethyldisilane (HMDS: Si2(CH3)6). Depositions were performed under various temperatures and HMDS flow rates, which were...
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