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Piezoelectric AlN films were grown on Si(001) substrates at 200??C by RF reactive magnetron sputtering technique. The optimization of the sputtering parameters (target-substrate distance, RF power, gas composition) resulted in the quasi-epitaxial growth of crystalline wurtzite AlN thin films. The structure and the morphology of the films were investigated by X-ray diffraction and atomic force microscopy...
GaN-based materials and devices are expected to play an important role in future information and energy applications. In this paper, we summarized our recent results in metal organic vapor phase epitaxy growth of nitride materials and blue light-emitting diodes (LEDs) on c-plane sapphire substrates. First, the key parameters for high quality GaN bulk growth have been discussed and an evaluating method...
In this paper we report the conclusions about the analysis between the characteristics of nitrided thin gallium nitride (GaN) films on GaAs and epitaxial GaN films on buffer nitrided films. We use the metal-organic chemical vapour deposition technique for synthesize these films. Also ones films were characterized using X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM).
High temperature gallium nitride (HT-GaN) layers were grown by HVPE (hydride vapor phase epitaxy) method on low temperature GaN (LT-GaN) buffer layers deposited by HVPE or MOVPE method and on double MOVPE LT-GaN/AIN buffers. The (0001) sapphire substrates were applied. The HCl flow rate and deposition time intervals of nucleation layer deposition were varied in the range of 8-10 ml/min and 5-9 min...
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