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III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the performance of normally off AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs) using a boost-converter circuit. The figures of merit of our large (57.6-mm gate width) GaN transistor are presented: of 2.5 ...
This paper presents a high voltage gain DC-DC converter. The proposed converter is based on the Sepic topology using the three-state switching cell. This converter is suitable for applications with a high voltage gain between the input and the output, as well as, UPS and renewable energy system. Another important feature of this converter is the lower blocking voltage across the controlled switches...
In this paper, a novel step-up converter is presented, where the charge pump concept, combined with the traditional boost converter structure, is utilized. Although two inductors are used in such a converter, the difference in value between the two inductors does not degrade the performance of this converter. Besides, the behavior of this converter is similar to the traditional boost converter, and...
We report the DC and switching performance of a normally-off 5 A/1100 V GaN-on-Si device. The device had a breakdown field of 95 V/??m and a VB2/Ron,sp of 272 MW/cm2. A 360 V/180 W boost converter was operated at 200 KHz, with an efficiency >92%. Respectively, these values are the highest for a normally-off GaN-on-Si device.
A novel converter, named as negative-output KY boost converter, is presented herein, which needs one additional capacitor and one additional diode as compared to the boost converter. In the following, the basic operating principle of the proposed converter is illustrated in detail, together with some simulated and experimental results to verify its effectiveness.
In this document we compare the control architecture of an existing high power electronic application with the control architecture proposed in the guideline elaborated by the task force (PAR 1676) of the power electronics building blocks (PEBB) concept working group. It is shown to what extent the hierarchy of the existing control system maps the hierarchy proposed by the guideline. Additionally...
An on-chip buck converter with 3D chip stacking is proposed and the operation is experimentally verified. The manufactured converter achieves a maximum power efficiency of 62% for an output current of 70mA with a switching frequency of 200MHz and a 2x2mm on-chip LC output filter in 0.35mum CMOS. The use of glass epoxy interposer to increase the maximum power efficiency up to 71.3%, and the power efficiency...
This paper presents a test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to test a single power switch and a single power diode for continuous or burst switching conditions up to 5 kV and 5 A. The test system includes a 4.5 kV to 5 kV boost converter to emulate a 22...
Boost converters operated in critical mode can achieve high efficiency, while they have some limitations, such as high current ripple, high component rating and low power application. Thus, this paper proposes integrated circuits (IC) of a powerfactor corrector (PFC) controller for interleaved critical-mode boost converters. The proposed PFC control IC can achieve the features of interleaving function,...
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