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We report on the epitaxial growth, fabrication, and characterization of full-color InGaN/GaN dot-in-a-wire nanoscale LEDs on Si(111), which can exhibit an internal quantum efficiency of ~ 45% and negligible saturation up to ~ 300 A/cm2.
The junction temperature of a light-emitting diode (LED) directly and greatly affects its performances. Therefore, the reliable measurement and accurate estimation of the junction temperature of an LED is extremely important. This paper proposes an approach for directly determining the dependence of junction temperature on injected currents in InGaN and AlGaInP LEDs. Various important physical parameters...
Internal quantum efficiency (IQE) of InGaN-based ultraviolet light emitting diodes (LED) grown on patterned sapphire substrate (PSS) and flat sapphire were measured by photoluminescence and electroluminescence methods. The IQE improvement of PSS LED is significant.
The present work reports some experimental results on the electrical properties of commercial Gallium Nitride blue light emitting diode (GaN blue LED). Many instruments have been used in this study to make different kinds of measurements. For example, Keithley 238 high current measure unit, Boonton 7200 capacitance meter, and Wayne Kerr 6440 precision component analyzer (within frequency range from...
The present paper reports some computational measurements for the electrical properties of commercial Gallium Nitride blue light emitting diode (GaN blue LED). Many instruments have been used in this study to make different kinds of measurements. For example, Keithley 238 high current measure unit, Boonton 7200 capacitance meter, and wayne Kerr 6440 precision component analyzer ( within frequency...
Unique correlations between the excitonic characteristics and hetero-interface charge distribution of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) were investigated over a broad range of temperatures. The dependence of non-unity ideality factors extracted from the current-voltage analysis on temperature determines the carrier-transport mechanisms in the heterodevices. Furthermore,...
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