The present paper reports some computational measurements for the electrical properties of commercial Gallium Nitride blue light emitting diode (GaN blue LED). Many instruments have been used in this study to make different kinds of measurements. For example, Keithley 238 high current measure unit, Boonton 7200 capacitance meter, and wayne Kerr 6440 precision component analyzer ( within frequency range from 20 Hz to 3 MHz ). In this paper, the electrical properties of the selected sample are studied in details under wide range of temperatures ( 100 - 440 ) deg K. Analysis and discussion for the obtained results are adopted. It is known that many semiconductors are well suited for light emission, particularly the compound ones with direct band gaps. According to the excitation mechanisms of excess carriers, electroluminescence, due to forward bias, provides an important application of diodes as generators of light. The uses of LEDs in digital displays, communication, and other areas are well known. Recently, GaN blue LEDs are widely used in electronic devices in most all daily-life applications. A comprehensive measurement has been issued such as the I-V characteristic where we get ideality factor and series resistance at different temperatures. Doping concentration and built-in potential also are obtained from the C-V characteristics. The activation energy has been calculated by two methods; the I-V characteristic and admittance spectroscopy, respectively. Keithely 238 high current measure unit is used to address a wide variety of applications, including the I-V characteristics of semiconductor devices, Fig.(1). It is fully programmable to perform source measurements as a function of stepped voltage or current which can be swept linearly, logarithmically, or pulsed. Ideality factor and series resistance have been obtained as functions of temperature, Figs (2) and (3). They have approximately exponential decays with temperature within the range from 100 Kdegto 380 Kdeg. Their corresponding values extend from 10.98 to 3 for ideality factor, and from 1000 Omega to 200 Omega for series resistance, respectively. The conduction mechanism deviates from thermionic emission theory, especially at relatively lower temperatures.n In addition, by using I-V characteristic, the activation energy ranges from 0.12 eV at forward bias of 1.4 V to 0.093 eV at 2.5 V, respectively. However, it is of the value of 0.31446 eV calculated by admittance spectroscopy. These discrepancies from thermionic emission mechanism are due to different factors such as image force lowering, tunneling, recombination within the depletion layer, and the presence of thin interfacial oxide layer.