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A new approach to reduce contact resistance on AlGaN/GaN HEMTs, in which an inherent tradeoff involving the AlGaN layer thickness exists, is discussed. This method introduced uneven AlGaN layer structures under the ohmic contact metal layers. The fringing effect where the AlGaN layer thickness fluctuates plays an important role. Effects of horizontal pattern features and their size, in other words,...
We compared to the characteristics of fabricated AlGaN/GaN HEMTs on a Si substrate with conventional ohmic contact and improved ohmic contact. In conventional ohmic contact with metal scheme of Ti/Al/Ni/Au or Ti/Al/Ti/Au, generally ohmic contact resistance is good but, surface topography has bad morphology due to ball-up by low Al melting point at high temperature RTA over 800°C. In order to improve...
The quality of ohmic contacts in pseudomorphic high electron mobility transistors (p-HEMTs) formed by sequential e-beam evaporation of Ni/Ge/Au/Ag/Au was investigated as a function of alloying cycles in the range from 390degC to 460degC for duration of 30 sec. The contact resistance (Rc) and the specific transfer resistance (ohm-mm) values of ohmic contacts so formed were measured by Transmission...
To improve the performances of ohmic contacts for GaN devices, a novel multilayer Ti/Al-based metal scheme (Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ni/Au) on undoped AlGaN/GaN heterostructures was employed. A contact with ??c (specific contact resistance) of 8.74E-07 ????cm2, Rc of 0.22 ????mm was demonstrated. Ohmic contacts with the novel metal structure were measured with I-V, SEM, HRTEM to show their properties...
Novel design concepts and cutting edge results are presented for high-power AlGaN/GaN Heterostructure Field-Effect Transistor switches for power converters, control and radio-frequency applications. For power switching, the HFET design has to be different from that of power amplifiers in order to minimize the contact resistance and avoid current crowding in the metal electrodes of large-periphery...
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