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Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
A reduction of parasitic resistance is presented with incorporation of preamorphization implantation (PAI) and self-aligned Cu3Ge in the source/drain region for germanium p-MOSFETs. Full activation of boron in the amorphous layer can be obtained during solid-phase epitaxial growth, and a concentration as high as 4 x 1020/cm3 is achieved. This nonthermal equilibrium concentration is maintained during...
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