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In this research, a backside illuminated CMOS image sensor (BSI-CIS) without through-silicon via and TSV based Si interposer are developed with thin wafer handling technology. The BSI-CIS wafer is implemented front-side processes then temporary bonded on a Si carrier by using ZoneBOND™ technology. After thinning, the CIS backside is bonded with glass wafer, and the Si carrier is removed using solvent...
In this paper, one novel packaging approach for crystal resonator with the quartz crystal is demonstrated, developed and characterized. The proposed crystal resonator of the novel package adopts several 3-D core technologies, such as Cu TSVs, thin-film Cu/Sn eutectic bonding, and wafer thinning. A 1210 crystal resonator with quartz blank mount is successfully developed with Cu TSVs that enables the...
Through-silicon via (TSV) technology for 3D-LSI is attracting much attention as a means of alleviating the miniaturization limits on advanced semiconductor devices. Despite a great deal of research, low load (<1MPa), low temperature (<200°C) and short time (<5min) solid phase bonding with high heat resistance (>350°C) to prevent the damage of weak low-k dielectric material etc. has not...
In this study, ultra fine pitch Cu/Sn lead-free solder microbumps are investigated. Emphasis is placed on wafer bumping, assembly, and reliability of microbumps for 3D IC integration applications. The test vehicle consists of a chip (5mm × 5mm) with 3,200 pads. The pad size is 5μm in diameter and on 10μm pitch. A daisy-chain feature is adopted for the characterization and reliability Assessment. After...
In this study, a wafer-level 3D integration scheme with Cu TSVs based on Cu/Sn micro-bump and BCB adhesive hybrid bonding is demonstrated. To realize the signal transmission effects in high speed digital signaling via Cu TSV and Cu/Sn micro-joint interconnection, the insertion loss was investigated by simulation analysis with variable TSV pitches, micro-bump diameters and chip thicknesses. Key technologies...
In this paper, at first electroplating of copper and tin is optimized to fabricate micro-bump. Chip-to-chip bonding process is developed. Then, a temporary bonding process is developed and verified by experiment. And finally, a process for manufacturing multiple layer stacked chip module is designed and prototype of a 4 layer stacked chip module is fabricated successfully.
Dual damascene integration was applied to High Density Through Silicon Vias in order to provide a low-cost TSV process. The architecture was developed for 3 μm-width and 20 μm-height vias to fit electrical and morphological requirements. Electrical results show the manufacturability of the process (>;95% yield). Using LETI internal cost model, we estimate a cost reduction of 23% compared to single...
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