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Thin film GaN growth on c-plane sapphire (0001) substrate using two-step method by nitrogen plasma assisted MBE is reported. After growth optimization, a low temperature buffer layer was grown followed by the main GaN thin film. The Optical and structural properties of the film were investigated using XRD, Raman spectroscopy, Photospectrometry and in-Situ RHEED. The polycrystalline nature of the grown...
With the advancement of technology, the semiconductor materials are fabricated with ever shrinking size in order to reduce space and weight while at the same time benefiting from the improved performance such as high speed and low operating power. Recently found phenomena called, quantum confinement (QC) effects related to semiconductor material reaching the size in nanometer scale, only added to...
We have investigated the luminescence and structural properties of as-grown and thermally annealed lattice-matched GaInNAs-on-GaAs epilayer, grown by molecular-beam epitaxy. The study has been done by means of photoluminescence (PL) in conjunction with Raman spectroscopy and X-ray diffraction measurements. We have found that besides the near band-edge PL emission a broad emission band can be seen...
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