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The semiconductor industry has maintained its historical exponential improvement in performance by aggressively scaling transistor dimensions. However, as devices approach sub-100-nm dimensions, scaling becomes more challenging and new materials are required to overcome the fundamental physical limitations imposed by existing materials. For example, as power supply voltages continue to decrease with...
Silicon germanium on insulator (SGOI) is a straightforward material for ultimate device scaling. This substrate combines two advantages: high carrier's velocity of the Si1 - xGex alloy and low parasitic capacitance due to the presence of a buried oxide. Several fabrication techniques for SGOI substrates, as SMOX, SMART-CUTtrade or liquid phase epitaxy have been proposed. Tezuka et al. present a new...
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