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Small-bandgap InAs channel materials are potential candidates for high-speed and low-power applications and have been demonstrated in AlSb/InAs/AlSb QWFETs. Taking advantage of their excellent transport properties, we successfully develop an InAs-channel metal-oxide-semiconductor modulation-doped field-effect transistor (MOS-MODFET) using 100-nm PECVD-deposited SiO2 dielectrics for gate dielectrics...
Compared with the conventional high electron mobility transistor (HEMT), the metal-insulator-semiconductor (MIS)-HEMT has several advantages such as lower gate leakage current, higher maximum saturation drain current and the better restrain of current collapse. This paper studied the effects of temperature and the thickness of dielectric on the characteristics of Al2O3 MIS-HEMT. The device characteristics...
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