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This paper presents the results of modeling and simulation of the the DC characteristics of an Al0.25Ga0·75N/GaN Metal Oxyde Semiconductor High Electron Mobility Transistors (MOSHEMT's). This study is achieved by using a drift diffusion transport model of a commercial device simulator silvaco. Two dimensional numerical simulation is used to describe significant physics in the characteristics for Al...
Compared with the conventional high electron mobility transistor (HEMT), the metal-insulator-semiconductor (MIS)-HEMT has several advantages such as lower gate leakage current, higher maximum saturation drain current and the better restrain of current collapse. This paper studied the effects of temperature and the thickness of dielectric on the characteristics of Al2O3 MIS-HEMT. The device characteristics...
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