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In this paper, an emerging double-heterostructure high-electron mobility transistor based on AlN/GaN/AlGaN grown on silicon substrate is presented, which enables a unique simultaneous achievement of high breakdown voltage and high frequency performance. This configuration system allowed state-of-the-art GaN-on-silicon dc, RF output power, and noise performances at 40 GHz, paving the way for high-performance...
The effects of access region scaling on the performance of millimeter-wave GaN HEMTs is investigated through nanoscale carrier dynamics description obtained by full band Cellular Monte Carlo simulation. The drain current and transconductance have shown to increase monotonically up to respectively 5500 mA/mm and 1500 mS/mm by symmetrically scaling the source to gate and gate to drain distance from...
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