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Novel fabrication methods are investigated to enhance the sensitivity of resistive probes. In this paper, two new silicon resistive probes are presented by using two-dimensional device simulation (SILVACO??). Enhancement probe and I-MOS probe are formed by using anisotropic etch and mask transcription process. Due to novel structures, the sensitivity of resistive probes is increased dramatically.
The dramatic increase in leakage current, coupled with the swell in process variability in nano-scaled CMOS technologies, has become a major issue for future IC design. Moreover, due to the spread of leakage power values, leakage variability cannot be neglected anymore. In this work an accurate analytic estimation and modeling methodology has been developed for logic gates leakage under statistical...
Design and characterization of a new generation of single-photon avalanche diodes (SPAD) array, manufactured by ST-Microelectronics in Catania, Italy, are presented. Device performances, investigated in several experimental conditions and here reported, demonstrate their suitability in many applications. SPADs are thin p-n junctions operating above the breakdown condition in Geiger mode at low voltage...
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