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Monte Carlo device simulations are carried out to analyse electron transport in scaled Si and In0.3Ga0.7As MOSFETs starting from a 25 nm gate length Si and In0.3Ga0.7As MOSFETs monitoring the electron velocity, kinetic energy and sheet density along the channel at a supply voltage of 1.0 V. We have found that while the drive current is scaled Si MOSFETs dramatically increases, the current increase...
Sub-5 nm ultrashallow junctions in planar and non-planar semiconductors are formed by use of a molecular monolayer doping method and conventional spike annealing. ~70% of the dopants are found to be electrically active, allowing for a low sheet resistance for a given dopant areal dose, and minimal junction leakage currents (<1 muA/cm<sup>2</sup>) are observed. This indicates the high-quality...
In this letter, we demonstrate the record small-signal performance from N-polar GaN-based metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) by using a GaN spacer structure with an AlN barrier to reduce alloy scattering. High Si doping in GaN without excessive surface roughening has been achieved using a digital doping scheme. A low ohmic contact resistance of 0.16 ?? ??...
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