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Monte Carlo device simulations are carried out to analyse electron transport in scaled Si and In0.3Ga0.7As MOSFETs starting from a 25 nm gate length Si and In0.3Ga0.7As MOSFETs monitoring the electron velocity, kinetic energy and sheet density along the channel at a supply voltage of 1.0 V. We have found that while the drive current is scaled Si MOSFETs dramatically increases, the current increase...
As these As transistors are scaled to nanometer dimensions, the discreteness of the dopants becomes increasingly important. Transistors of 3 times 3 nm2 cross section contain, on average, approximately one dopant atom per nanometer of length, making any self-averaging impossible. The individual random dopants act as localized scatterers whose distribution, and therefore, impact on the electron transport,...
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