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Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8" wafers. Large ION at low VDD are possible according to TCAD simulations but awaits verification. VDD scaling will greatly benefit from low (effective) band gap energy, which may be provided by type II heterojunctions of Si/Ge or compound...
We show the impact of process parameters on the electrical performance of complementary Multiple-Gate Tunneling Field Effect Transistors (MuGTFETs), implemented in a MuGFET technology compatible with standard CMOS processing. Firstly, the impact of the gate oxide thickness and implant doping conditions on the tunneling performance is analyzed and compared with TCAD simulations. Secondly, three different...
The need to reduce power consumption in future logic devices has led to the exploration of different types of logic devices. One of the most attractive new types of logic is one that is based on the collective motion of charges in a semiconductor device. While there are many systems which exhibit exotic collective effects, coupled layer, or pseudospintronic, systems offer exotic physical behavior...
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