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Steep channel profiles of scaled transistors are a promising approach for advancing transistor generation in bulk complementary metal-oxide-semiconductor (MOS). In this paper, a carbon-doped Si (Si:C) layer under an undoped Si layer is proposed to form steep p-type channel profiles in n-channel MOS field-effect transistors (nMOSFETs) due to extremely low diffusivity of boron and indium in Si:C layers...
Si:C layers under non-doped-Si epitaxial channel (Epi-channel) produces steep channel profile for 25 nm-LG nMOSFET. Si:C layers work as the dopant-diffusion-barriers from the boron doped regions. Moreover, retrograde Halo profiles are also realized in this structure. Steep channel profiles at scaled device are confirmed, and the benefits of its profile at LG of 25 nm are discussed.
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