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In this paper the short-circuit robustness of state of the art SiC MOSFETs is analysed and their short-circuit behaviour is compared to that of a modern IGBT. A simplified thermal model of the chip itself is used to explain the difference between the behaviour of IGBT and SiC MOSFET under short-circuit conditions. Further, this model is used to derive the requirements for short-circuit detection methods...
The thermal behavior knowledge of IGBT devices is very important to address issues related to the thermal management. Experimental measurements could provide the junction temperature of the devices in transient or steady state conditions. However, in case of short circuit, it became very difficult to get the temperatures because of the very short time in which the phenomenon happens (order of microseconds)...
This paper mainly does a research on force and thermal phenomena of short circuited melted mark in electrical fire. The primary short circuited melted mark and secondary short circuited melted mark were prepared by the experiment, and were characterized by metallographic microscope, powder X-ray diffraction, scanning electron microscope and energy dispersive spectroscopy, the role of forces and heat...
As a key issue in EVs (Electric Vehicles) development, Li-ion battery's thermal safety is focused on in which the thermal abuse model is an important tool. This paper has established a 3-D electro-thermal model taking side reaction into account, in order to study on MGL100Ah lithium manganite battery's safety issue. This paper firstly states the mechanism of heat generation, types of thermal model,...
The active development of high temperature superconductor (HTS) materials has led to extensive research and development studies of superconducting transformers worldwide. Considerable benefits have been accomplished with the introduction of the HTS transformer such as reduced power loss, size, and transformer weight. However, recent advancement in the design technology has focused on the HTS transformer's...
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