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We report the effect of a Ta/TaN/SiCN tri-layer barrier on the electrical properties and thermal stability of single damascene (SD) lines for Cu-ultra low k (2.3) integration. It was found that by incorporating a thin SiCN layer between the Ta/TaN barrier and ultra low k material, the leakage current can be significantly reduced and the breakdown voltage can be enhanced. A thermal treatment at 200°C...
This paper details the first reported integration of two advanced digital microfluidic technologies where 100 mum silicon cubes are transported with electrowetting on dielectric (EWOD) and the droplet then held with EWOD while the silicon cubes are mixed with another liquid using a surface acoustic wave (SAW). Together these two technologies provide a comprehensive lab-on-a-chip combination with well...
Narrow trenches with Critical Dimensions down to 17 nm were patterned in oxide using a sacrificial FIN approach and used to evaluate the scalability of TaN/Ta, RuTa, TaN + Co and MnOx metallization schemes. So far, the RuTa metallization scheme has proved to be the most promising candidate to achieve a successful metallization of 25 nm interconnects, providing high electrical yields and a good compatibility...
A novel method for the prediction of early failure (EF) due to a non-visual defect is proposed for the time-dependent dielectric breakdown (TDDB) of low-k dielectrics. The yield-reliability relation model is modified to evaluate the EFs. The effectiveness of the novel method is experimentally confirmed by using a 65 nm technology node. A bimodal lifetime distribution is used to evaluate the lifetime...
In this paper, temperature dependence of the characteristics of a silicon nanowire (SiNW) Schottky-barrier (SB) MOSFET device has been investigated in detail. Palladium or titanium source and drain SiNW MOSFETS integrated with an Al2O3/TaN/Ta gate stack have been fabricated and characterized at different temperatures. Results show that SB SiNW MOSFETs operate with different principles, compared to...
An analysis of the electronic properties of Ta2O5/electrolyte junction is reported for thin film( les 14 nm) grown on tantalum in acidic electrolyte. The investigation is carried out by the synergetic use of three techniques: Photocurrent Spectroscopy (PCS), Electrochemical Impedance Spectroscopy (EIS) and Differential Admittance (DA) measurements. PCS is a non destructive optical technique based...
We present a successful synthesis of single crystalline homogeneous Si1-xGex nanowires (diameter: 7~52 nm) via vapor-liquid-solid mechanism. Results show that quality, density, and growth rate of Si1-xGex nanowires are greatly affected by the growth temperature and the single crystalline Si1-xGex nanowires without amorphous sheath layer can be obtained at optimized growth temperature. Control of the...
Spectroscopic ellipsometry is emerging as a routine tool for in-situ and ex-situ thin-film characterization in semiconductor manufacturing. For interconnects in ULSI circuits, diffusion barriers of below 10 nm thickness are required and precise thickness control of the deposited layers is indispensable. In this work, we studied single films of tantalum and two stoichiometrics of tantalum nitride as...
The step coverage and continuity of a Ta(N) I-PVD barrier layer is investigated combining an HF-dip technique, X-SEM and TEM. The HF dip technique appears to be the most sensitive in revealing imperfections on the sidewall of recesses. The aspect ratio (AR) dependence of the I-PVD deposited barrier is apparent. The studies were complemented with with Single Wavelength Ellipsometry. It is pointed out...
We describe a liner for Cu-Damascene multilevel ULSI interconnects, which satisfies all the important requirements for a high performance and reliable Cu interconnect technology. This liner is implemented in the first manufacturing process to produce and ship CMOS chips with Cu interconnects. The liner is a bilayer from a family of hcp/bcc-TaN followed by bcc-Ta (/spl alpha/-Ta), deposited sequentially...
The authors investigate the enhanced thermal oxidation of tantalum using oxygen-ion implantation. A comparison of the electrical and dielectric properties is made between the oxygen-implanted thermal oxides and of those fabricated without implantation. The ion-implanted tantalum-oxide films are shown to be superior to the unimplanted layers for the fabrication of oxide capacitors.<<ETX>>
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