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The role of SiNx passivation using two different deposition techniques, namely Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) on gate reverse leakage current of AlGaN/GaN HEMTs was studied. It was observed that devices having PECVD SiNx films exhibit higher leakage than devices with ICPCVD SiNx films. To understand the mechanism...
In this study, the circular Schottky diodes fabricated on a standard AlGaN/GaN epitaxial wafer with fluorine ions plasma CF4 and CHF3 treatment technology were proposed. The Schottky diode with 60sec CHF3 plasma treated exhibits a high breakdown voltage of -352V, and a low reverse leakage current of 10-7A. It also presented low switching loss and high stability. According the outstanding performance,...
Fundamentals of current transports of the Ni/Au/AlGaN/GaN HEMTs have been studied under the temperature between 27degC and 250degC. It's found that the maximum drain-source current (IDS) decreases with rising temperature, and the temperature dependent of IDS has a negative coefficient of -0.314mA/mm.degC. The decrease in mobility is considered to be the main cause of this deterioration. It's also...
It has been found that the reverse leakage current of AlGaN/GaN Schottky contacts can be significantly reduced by a CF4 plasma treatment prior to the Schottky metal evaporation. The data of electrical characterization suggest that the leakage reduction is related to the modification of the semiconductor surface by plasma treatment. The leakage reduction effect was also observed in GaN Schottky contacts...
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