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Fundamentals of current transports of the Ni/Au/AlGaN/GaN HEMTs have been studied under the temperature between 27degC and 250degC. It's found that the maximum drain-source current (IDS) decreases with rising temperature, and the temperature dependent of IDS has a negative coefficient of -0.314mA/mm.degC. The decrease in mobility is considered to be the main cause of this deterioration. It's also...