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Electromigration time to failure and electrical resistivity of 95.5%Sn-1.5%Ag-0.5%Cu-0.03W%Ni (SACN) microelectronics solder joints have been investigated experimentally. A Black's type electromigration time to failure equation is developed to describe the time to failure versus current density and temperature. The activation energy over the range of 83°C∼174°C is measured to be 0.77±0.12eV, and the...
Time evolution of resistance during EM tests is extensively analyzed for various Cu interconnect structures and processes from the 40 nm node technology. Resistance evolution is used to model void nucleation and growth kinetics. We show that adding Al or other impurities in the line is effective to increase electromigration lifetime. This lifetime increase is due, as expected, to Cu drift velocity...
Electromigration under bidirectional current is studied on dual damascene copper interconnects for the 65 nm node. Physical analyses confirm void location a both ends of the line and copper transport over long distance. Resistance evolution was studied and correlated to void healing/growth kinetics. Finally, we show the interest of bidirectional tests to study multimodal failure mode.
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