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To cope with the growing problem of device variability from the viewpoint of global variability, the authors developed a completely quantum-mechanical (QM) capacitance voltage (C-V) simulator of polycrystalline-Si-gate p-channel metal-oxide-semiconductor (PMOS) devices in a similar way to the previous one for n-channel MOS (NMOS). The simulator was entirely based on experimental results and did not...
This paper presents a quasilumped microstrip structure highpass filter having a cutoff frequency 1.5 GHz. The quasilumped elements used for this design have their size smaller then the quarter of the guided wavelength at the operating frequency. The proposed designs is a three pole filter, consisting of short circuit stub transmission line and inter digital capacitors on a commercial substrate having...
A BaSrTiO3-BCB composite was developed for spin-coating to integrate capacitors into multilayer wiring for Wafer Level Packaging (WLP) and System in Package (SiP). The size of nanoscale barium strontium titanate crystallite size was measured as 24 nm. The matrix for the composite was BCB with 63 wt.-% solids dissolved in mesitylene. Various dispersants were tested to find the best surfactant for the...
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