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We present some recent studies demonstrating that the scanning spreading resistance microscopy (SSRM) technique is a good candidate for the 2D calibration of process/device simulators as it offers a unique combination of spatial resolution and of sensitivity. HV-SSRM (high vacuum SSRM) is a new and promising improvement of the classical SSRM technique presenting an enhanced resolution and a better...
In industrial environments, technology computer-aided design is used intensively for the design and optimization of new device architectures. To maintain its usefulness for future technology nodes, process simulation has to be able to predict the activation and distribution of dopants after advanced implantation and annealing schemes. Such annealing strategies will be based either on millisecond annealing...
As VLSI technology scales toward 65nm and beyond, both timing and power performance of integrated circuits are increasingly affected by process variations. In practice, people often treat systematic components of the variations, which are generally traceable according to process models, in the same way as random variations in process corner based methodologies. Consequently, the process corner models...
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