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In this study, the degradation mechanism of the interface integrity between a hafnium dioxide thin film and a gate electrode thin film was investigated by using quantum chemical molecular dynamics. Effect of point defects such as excessive oxygen and carbon interstitials in the hafnium dioxide films on the formation of the interfacial layer between them was analyzed quantitatively. Though the defect-induced...
HfO2 gate dielectric films with a blocking layer of Al2O3 inserted between HfO2/Si were treated with rapid thermal annealing process at 700degC. The interfacial structure and electrical properties are reported. X-ray photoelectron spectroscopy indicated that the interfacial layer of SiOx transformed into SiO2 after the annealing treatment, and Hf-silicates and Hf-silicides were not detected. High-resolution...
The HfO2/Hf stacked film has been applied as the gate dielectric in MOS devices. The HfO2 thin film was deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAH and O3 as precursors, Prior to the deposition of HfO2 film, a thin Hf metal layer was deposited as an intermediate layer. The deposition temperature of HfO2 thin film was 350degC and its resulted thickness was...
A generalized reliability model of BTI is presented where it is shown that gate stacks with similar interfacial layer lie on the same NBTI vs. E-field universal curve and those with similar bulk layer lie on the same PBTI vs. E-field universal curve. From these universal curves, an optimal gate stack can be derived for which NBTI=PBTI
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