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A 6th order low-pass 1.6 to 3.2 GHz gm-C filter for fiber optic adaptive EDC receivers cascades three Bi-Quads permitting reduction of group delay variation down to 10 ps. Cut-off frequency is tuned by switching CMOS varactors polarity. THD is below -40 dB at 0.9 Vpp-diff output. CTF is implemented in a 0.18 mum SiGe process, it occupies 0.17 mm2 and consumes 0.3 W from 3.3 V supply.
A UWB LNA (low noise amplifier) based on 0.35 ??m SiGe BiCMOS technology is presented in this paper. This LNA adopts a resistance feedback topology to optimize the gain and noise figure. The serial inductance at the base is used to matching input impedance and decreasing group delay variation. The simulation results indicate that the gain of LNA reaches 12.5 dB with the variation of 1.9 dB and the...
We demonstrate a low dc power consumption SiGe heterojunction bipolar transistor (HBT) low noise amplifier (LNA) for ultra-wideband (UWB) applications covering the 0.5GHz to 10GHz band. Using theoretical analysis, the dominant design factor for low group delay variation is identified and applied to UWB LNA design. The implemented SiGe LNA achieves a gain of 13dB, a minimum noise figure of 3.3dB, and...
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