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We present the effectiveness and competitiveness of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann-Poisson (BP) system describing electron transport in semiconductor devices. In particular, we show that the scheme can maintain reasonable accuracy even with rather coarse meshes, hence providing a good alternative to the traditional DSMC...
We study the coherent transport of electrons through a uniformly doped Silicon quantum wire in the presence of one impurity in the channel at room temperature using fully 3D Non-Equilibrium Green's Functions technique. The potential of the single impurity, assumed to be attractive (a donor), is self-consistently calculated via Poisson equation coupled with Schro??dinger equation in the effective mass...
The effect of the surface roughness on the electron transport of a double gate nano MOSFETs has been investigated. The study has been carried out using a simulator based on the two-dimensional non-equilibrium Green's function (NEGF) formalism coupled self-consistently with Poisson's equation. An appropriate control volume discretisation scheme for the Poisson and Green's function equations has been...
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