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The test circuit, in which the cells including CBCMs (charge-based capacitance measurements) are arrayed in matrix shape, is developed to measure MOSFET capacitance variation. By adjusting the bias condition of the test circuit, it is able to obtain C-V curves for many MOSFETs. Additionally, a variation of threshold voltage is extracted from the estimated C-V curve variation. The obtained threshold...
In this brief, we carried out extensive mixed device and circuit-mode simulations to calibrate the charge-based capacitance measurement technique specifically for subfemtofarad nanowire-based device capacitance. The factors that influence the accuracy of the technique were identified.
In this work the charge-based capacitance measurement (CBCM) method has been extended and calibrated to measure sub-fF level bias-dependent capacitance of single channel silicon nanowire (SNW) transistors. Mixed mode simulations are used to establish the efficacy of the method. Test keys have been carefully designed and fabricated on-chip so that C-V and I-V characteristics are measured on the same...
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