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We have studied the impact of sulfur cleaning for (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interfaces using an (NH4)2Sx solution. We found that the sulfur cleaning can effectively remove native oxides from InGaAs surfaces and passivate the InGaAs surfaces by sulfur atoms. Combining with trivalent oxide passivation using Al2O3, the Al2O3/InGaAs...
The effect of scaling down gate oxide thickness on radiation induced damage in MOS capacitors with sub-10 nm gate oxides is reported. The trend of reduction in radiation induced positive charge and interface state generation is observed to continue for these ultrathin gate oxides. Results show that neutral trap generation due to radiation exposure is negligible in sub-10 nm gate oxides.<<ETX>>
The authors report a study on charge trapping/detrapping and dielectric breakdown of ultrathin reoxidized Si/sub 3/N/sub 4/ stacked layers on rugged poly-Si under dynamic stress. It was found that the dielectric time-to-breakdown (t/sub BD/) in capacitors with rugged poly-Si under dynamic stress increases with increasing frequency, whereas t/sub BD/ in capacitors with smooth poly-Si decreases with...
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