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The mobility of semiconducting single wall carbon nanotube in its intrinsic as well as doped state has been evaluated by Monte Carlo simulation approach. The role of electronic bandstructure, electron-phonon interaction, electron-impurity scattering and quantum transport are taken into account during simulation. The mobility for our model is studied at different temperature levels which implicitly...
Aggressively scaled 30 nm gate CMOSFETs for 45 nm node is reported. We successfully improved the short channel effect with keeping a high drive current by Sigma shaped SiGe-source/drain (SiGe-SD) structure. Both hole mobility and source/drain extension (SDE) resistance in pMOSFET are improved by combination of optimized Sigma shaped SiGe-SD and slit-embedded B-doped SiGe-SDE. Electron and hole mobility...
In this paper, the self-consistent solution of l-D Poisson and Schrodinger equations is performed on doping profiles suitable for the fabrication of advanced ultra-short n-MOSFETs. Different issues are considered and investigated, including quantum-induced threshold voltage shifts, low-field electron effective mobility and gate-to-channel capacitance. The reported results give indications for the...
A theoretical calculation is performed to investigate the I/V characteristics of GaAs MESFETs. The calculation is based on a simple model that takes into account the dependence of electron mobility on electric field and doping. It is shown that velocity overshoot may be treated by an effective velocity higher than the bulk value.<<ETX>>
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