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A positive tone resist for UV and X-ray lithography synthesized starting from an organically modified silicon alkoxide, bis(triethoxysilyl)benzene, through the sol–gel method, either in basic or in acid catalysis, is presented. Being directly photo-processable, the sol–gel system combines the opportunity to avoid the use of a sacrificial layer in the fabrication process, with the possibility to fit...
Novel, very simplified, high-aspect-ratio, single-layer resist materials and process technology for KrF excimer laser lithography have been developed. They consist of a negative resist, a positive resist, and a surface treatment process called HARD (high-aspect-ratio resist pattern fabrication by alkaline surface disposal). Both the negative and positive resists are composed of an alkaline-soluble...
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