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For the first time, self-aligned suspended-body carbon nanotube field-effect-transistors (CNTFETs) with efficient and independent electrostatic control by two laterally placed independent gates spaced less than 100 nm away from the CNT channel have been demonstrated. A precise positioning method using resist trenches is used for their fabrication. A superior control of I–V characteristics by two lateral...
Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully depleted SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 μm may emerge as a most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature...
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