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Multiferroic (Bi1−xEux)(Fe1−xMnx)O3 (BEFM-x, x=0.00, 0.02, 0.04, 0.06, 0.08, and 0.10) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Compared to the pure BiFeO3 thin film, improved ferroelectric property and reduced leakage current density were observed in the co-doped BEFM-x thin films. Among them, the BEFM-0.08 thin film capacitor...
LSMO thin films materials have a strong interaction between their electrical and magnetic properties that could be translated into innovative tunable components. The knowledge of the electroactive and magnetoactive properties of these materials is essential for modeling and design of their novel based- devices. The activity of these materials can be described by their electro/magento resistance and...
BiFexCr1-xO3 (x=0.4~0.6) thin films were formed on Pt/Ti/SiO2/Si (100) substrates by chemical solution deposition. The spin-coated, dried and calcined films were finally annealed in a mixed gas of N2 and O2 (N2:O2=4:1) at 450, 500, 550 and 600??C. X-ray diffraction analysis revealed that polycrystalline grains of BiFeO3 and BiCrO3 coexist in the films, and that double perovskite Bi2FeCrO6 crystallites...
Tunability is being driven by a number of very interesting enabling technologies. This work demonstrates the feasibility of ferromagnetic thin film tunability at ambient temperature for radio frequency applications. A 400 nm thick LSMO thin film is formed by the chemical solution deposition (CSD) on the top of indium tin oxide (ITO)/SiO2/Si heterostructure. Interdigitated capacitor metallization is...
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