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Single damascene (SD) Cu/Aurorareg ULK interconnects with a minimum spacing of 50nm are achieved by using a metal hard mask (MHM) integration scheme, which enables to perform the resist ash before dielectric etch. This patterning scheme is used in combination with a low damage etch technique based on sidewall protection. Interconnect performance and reliability can be further improved by using Aurora...
This paper investigated various approaches to integrate Cu and extra low-k dielectric (ELK, k=2.5~2.2) for dual damascene fabrication. We demonstrate a trench-first hard mask process flow without k degradation by ash-free process and a novel pore sealing technique. In addition, we have extended this pore sealing concept to a via-first PR mask approach for porous ELK of 2.2. Both optimized hard mask...
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