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In this paper, GaN-based HFET devices on 4-inch Si substrates were fabricated, and the device characteristics were examined. As a result, the maximum drain current was estimated to be over 115 A using MIS-structures. A trade-off between the specific on-resistance (RonA) and the breakdown voltage (Vb) was improved using carbon doped buffer layers, resulting in obtaining RonA=3D 5.9 mΩcm2 and Vb=3D...
The paper presents a molecular beam epitaxial (MBE) grown buffer for nitride HEMT. The samples were grown at the same thermocouple temperature of 660??C. GaN buffer layer was directly grown on the GaN template. In the secondary ion mass spectrometry (SIMS) measurements, unexpected silicon and oxygen impurity atoms at the template surface that caused the buffer leakage were identified.
Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs and GaN MESFETs is performed, considering a deep donor and a deep acceptor in the semiinsulating GaN buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of a field plate affects buffer-related drain lag, gate lag and current collapse. It is shown that in both FETs, the...
We have achieved a 9 ??m-thick AlGaN/GaN high-electron mobility transistor (HEMT) epilayer on silicon using thick buffer layers with reduced dislocation density (DD). The crack-free 9 ??m-thick epilayer included 2 ??m i-GaN and 7 ??m buffer. The HEMTs fabricated on these devices showed a maximum drain-current density of 625 mA/mm, transconductance of 190 mS/mm, and a high three-terminal OFF breakdown...
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