The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Enhancement of electron emission by illumination of a metal-oxide-semiconductor (MOS)-type cathode based on nanocrystalline silicon has been studied using a He-Ne laser. Heavily doped p-type silicon was used as a substrate and the laser was irradiated on the gate with oblique incidence. The emission current was enhanced under illumination and quickly responded to on-off of the laser. In addition,...
This paper presents the results of extensive simulations on the characterization of asymmetrical channel device, namely Dual material Gate Fully Depleted Silicon On Insulator (DMG-FD-SOI) in the sub-100nm dimensions with emphasis on the analog, radio frequency (RF) performances and short channel effects (SCEs). The obtained results may serve as useful guidelines to get a basis overview of this gate-material...
We present the first demonstration of a novel field-effect device which has two channels: one formed in an organic semiconductor and the second in silicon. The channels are coupled such that one gates the other, with the organic channel exposed to air such that it is able to interact with chemicals in the ambient. This device represents a major improvement over both the traditional CHEMFET (which...
The authors have designed optimum 1/4- mu m-gate-length NMOSFETs with improved hot-electron immunity. The lithographies used were direct electron-beam and SR (synchrotron radiation) lithography. SR was used for the metallization. The threshold voltage of the NMOSFETs was determined over the whole range of operating temperatures. The fabricated E/E (enhancement mode/enhancement mode) ring oscillators...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.