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This article shares experience and lessons learned in teaching course on programmable logic design at Universitas Muhammadiyah Surakarta, Indonesia. This course is part of bachelor of engineering (electrical) degree program. Project-based approach is chosen to strengthen these students' understanding and practical skills. Each year's project involves challenges for the students to solve by implementing...
This paper deals with the optimized application of low voltage power MOSFETs in high frequency LLC DC-DC converter as synchronous rectification switches. The used semiconductor devices are trench MOSFET with improved figure of merit (FOM). The value of such a quantity is a good indicator that the MOSFET devices can operate at both high switching speed and extended current capability, as they are required...
In this work, we report the program-erase operation of a nonvolatile charge trapping memory base on a thin film transistor. The transistor is composed of an ultra-thin zinc tin oxide (ZTO) semiconductor layer and an Al2O3/Ni-nanocrystals/SiO2 dielectric stack. The threshold voltage (VTH), sub-threshold swing, ION/IOFF ratio of the as-fabricated device are 1.8 V, 0.40 V/decade and ∼107, respectively...
Several high-voltage silicon carbide (SiC) devices have been demonstrated over the past few years, and the latest-generation devices are showing even faster switching, and greater current densities. However, there are no commercial gate drivers that are suitable for these high-voltage, high-speed devices. Consequently, there has been a great research effort into the development of gate drivers for...
A silicon carbide (SiC) vertical field effect transistor (VJFET) with ultra-low feedback capacitance Crss has been developed, which is called as screen grid VJFET (SG-VJFET). The SG-VJFET is a very promising power device because of the superior static characteristics such as normally off, low on-resistance, and high breakdown voltage, furthermore, issueless in terms of gate oxide reliability and long-term...
Bayesian inference forms the basis for many models of human cognition as well as in the development of autonomous systems that must rapidly make decisions based upon ambiguous or incomplete sensory data. Recent research has shown that a simple Muller C-element can implement Bayes' rule directly using stochastic computation. In this work, the design of a stochastic Muller C-element that uses spin-based...
In this paper, a phase shifted full bridge (PSFB) dc-dc converter with secondary synchronous rectifier is implemented using GaN HEMT. The design considerations including PCB layout, optimal dead time for efficiency are described, and prototype hardware is implemented based on analysis results. The experiment is carried out with a 500W prototype, and power efficiency is compared with a conventional...
Due to C's overwhelming dominance in industry, reactive embedded applications usually rely on conventional sequential programming. Adopted approaches favor event-driven paradigms which prevent function-oriented code decomposition in particular. This encourages the violation of fundamental software engineering principles. The reactive programming paradigm is proposed as a general solution. However,...
This paper presents a detailed noise and non-linearity analysis of a 10-bit 1.2Vppd 50MS/s charge-injection based SAR-ADC designed in a 65 nm low power process. Being more area-efficient in contrast to a conventional capacitor DAC, a charge-injection-cell-based DAC allows to reuse its DAC cells during binary search. Based on extensive calculations and transistorlevel simulations, the charge-injection...
There is a variety of converter topologies applicable for switched reluctance machine. The simplicity, reliability, and suitability are key factors to consider for converter selection for the motor. The selection of switching schemes is also of worth importance for either converter selection. This paper presents the calculation method of switching losses in asymmetrical H-bridge converter for the...
Memristor technology is receiving an increased attention as a potential solution to meet the scaling demands in integrated circuit design. Memristor provides advantages like high-density, low-power, non-volatility and good scalability. In this paper, an 8-bit iterative full adder design is proposed that uses space-time based circuit notation. It uses stateful logic with memristive nanowire crossbar...
Low-power designs are a necessity with the increasing demand of portable devices which are battery operated. In many of such devices the operational speed is not as important as battery life. Logic-in-memory structures using nano-devices and adiabatic designs are two methods to reduce the static and dynamic power consumption respectively. Magnetic tunnel junction (MTJ) is an emerging technology which...
Ordinary single phase inverter gives a square wave output which when applied to electrical appliances may damage the later, reduce its efficiency as well as life as this inverter output waveform is not sinusoidal and contains lower and higher order harmonics in addition to fundamental. Moreover, the output voltage cannot be controlled. In this paper a single phase half bridge inverter is discussed...
Although widely deployed in recent years, the IPv6 protocols still have many security problems, especially the Man-In-The-Middle Attack in LAN (Local Area Network). In this paper we present an Address Forging and Data-Gram Forwarding based IPv6 Man-In-The-Middle Attack testing system to help user aware the security risks in IPv6 Networks.
Quantum dot Cellular Automata (QCA) is a very important nanotechnology which plays a pivotal role for the implementation of the circuits in the nano level. In QCA Majority AND and OR gates are used basically to implement the circuits in operation. In this paper a unique iGate is implemented which can operate in both AND and NAND operation.
This paper presents a zero voltage switching (ZVS) passive snubber circuit for the MOSFET used in conventional boost converter which consists of an inductor, a capacitor, a resistance and a diode. It helps in improving the high current and voltage stress. With the help of this circuit, power conversion efficiency is improved by controlling the voltage and current in the switch, thus providing zero-voltage...
Compared with the silicon semiconductors, silicon carbide (SiC) metal-oxide-semiconductor Field-Efïect transistor (MOSFET) can operate at higher switching frequency and higher temperature, which makes the junction temperature estimation more significant and challenging. In this paper, different thermo- sensitive electrical parameters (TSEPs) are investigated about their potential to measure the junction...
In this work, for the first time we propose a Germanium on FinBOX based structure for an Electron-Hole Bilayer Tunnel FET (FB-EHBTFET) including Quantum Effects. The structure provides improved OFF state leakage suppression of more than five orders without the need of gated underlap that is required in the conventional EHBTFET and Fin EHBTFET. This reduces the device size by ∼25% compared to the Fin...
An analysis of high speed sample and hold circuit in different structure is presented. Performance and area comparison between two type of sample and hold circuit in low voltage is done. These different type of circuits are simulated and layout designed in 55nm CMOS technology. Both the structures based on a bootstrap switch that can acquire analog wave forms at sampling rate of 100MHz with 10 bit...
In this work, the high temperature (up to 375°C) dynamic characteristics of 1.2kV SiC VDMOS, including the gate charge, the switching and the body diode reverse recovery characteristics, are measured and analyzed in detail. The experiments show that, with the increase of temperature, the Miller plateau declines, the reverse recovery charge rises, the turn-on time decreases and the turn-off time increases...
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