The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper proposes a wire-bonded design with a unique double-end sourced structure for multi-chip paralleled SiC power modules. The proposed design achieved a reduced power-loop inductance of 7.2 nH, while inheriting the advantages of the conventional wire-bond technology. More importantly, the symmetrical structure of the proposed design brought consistent performances to the paralleled devices...
Although SiC-MOSFET has shown significant advantages on switching performance compared with traditional Si counterpart, the dynamic loss of the hard switching SiC-MOSFET converter rises quickly with the increasing of the switching frequency. To further pushing the power density of SiC-MOSFET gird inverter, soft switching inverter with Zero-Voltage-Switching (ZVS) SVM technique is investigated. In...
A 1200 V SiC MOSFET switches at much faster rate compared to a Si IGBT. As a consequence, SiC MOSFET experiences comparatively more ringing in device voltage and current due to the presence of parasitic inductance in the converter layout. Therefore, it is not straightforward to retrofit SiC MOSFETs in the converter layout of IGBTs where parasitic inductance appears in the range of 100 nH to 300 nH...
The wide band-gap Silicon Carbide (SiC) and gallium nitride (GaN) materials based semiconductor devices have attracted tremendous attentions in modern power electronics applications. They provide much higher switching frequency and higher junction temperature than silicon power devices, thus to significantly decrease the system volume and weight, especially on passive components. In this paper, the...
The 15 kV SiC IGBT and 15 kV SiC MOSFET have been recently developed to enable non-cascaded high-frequency (HF) MV converters. Such direct MV DC interfacing Dual Active Bridge (DAB) converter is getting popular for DC micro-grid application due to higher efficiency, higher power-density and higher MTBF over the cascaded DAB topology. The high dv/dt in these devices on hard-switching with their inherent...
This paper investigates SiC power semiconductor devices in a three-phase active front-end Boost PWM rectifier for power conversion efficiency improvement. Different from Si IGBT based Boost PFC rectifier, the SiC MOSFET based Boost PFC rectifier can achieve the synchronous rectification by MOSFET channel reverse conduction for efficiency improvement. The operation principle difference of three-phase...
Silicon Carbide (SiC) MOSFETs, as wide-bandgap semiconductor device, has capability to switch at much higher frequency in comparison with their silicon (Si) counterparts. Industrial motor drive is usually connected to induction motor with long shielded cable. This long shielded cable introduces parasitics such as stray inductance and capacitance to the system, which affects SiC MOSFETs performance...
It is expected that wide-bandgap devices like silicon carbide MOSFETs and gallium nitride HEMTs could replace Si devices in power electronics converters to reach higher system efficiency, e.g., a 3-phase 380VAC bidirectional battery charger for electric vehicles. This paper uses the conventional half-bridge LLC topology to build a 10kW all-SiC bidirectional charger. As a well-known topology for the...
This paper presents design and implementations of a switch current sensor based on Rogowski coils. The current sensor is designed to address the issue of using desaturation circuit to protect the SiC MOSFET during shortcircuit. Specifications are given to meet the application requirement for SiC MOSFETs. It is also designed for high accuracy and high bandwidth for converter current control. PCB-based...
Certain Electromagnetic Interference (EMI) performance characteristics that occur in data taken from practical systems are often difficult to attribute to time domain features as waveforms will tend to deviate from the idealized analytical case. This paper shows that by taking multiple derivatives of experimental data and comparing this with the expected characteristics of a typical switching waveform...
High voltage wide bandgap (WBG) semiconductor devices like the 15kV SiC MOSFET have attracted great attentions because of its potential applications in high voltage and high frequency power converters. However, these devices are not commercially available at the moment and their high cost due to expensive material growth and fabrication may limit their widespread adoption in the future. In this paper,...
. The 10 kV to 15 kV SiC MOSFET and 15 kV SiC IGBT are state of the art high voltage (HV) devices designed by Cree Inc. These devices are expected to increase the power density of converters and are expected to replace 4.5 kV/6.5 kV Si IGBTs. However, these are not commercially available. On the other hand low voltage (LV) 1.7 kV SiC MOSFET is commercially available, and it is replacing existing 1...
The implementation of a novel bidirectional medium voltage AC-DC converter based on 10kV SiC MOSFET is presented in this paper. The improved topology allows the removal of the reverse blocking silicon diode in medium voltage SiC MOSFET module. Shoot-through problems and avalanche of the integrated silicon diode in traditional medium voltage bridge-type AC-DC converters are solved, allowing zero dead-time...
The high switching frequency (> 20 kHz) of SiC MOSFET module makes it as an attractive alternative of Si IGBT module for high power density applications. Since SiC MOSFET and Si IGBT have the similar MOS-gated structure, it is normally regarded that the gate driver of SiC MOSFET can directly inherit from that of Si IGBT. However, considering the different device physics properties, some special...
SiC MOSFETs are known to provide a better performance compared to Si IGBTs. However, they can also introduce undesirable behaviors like switching oscillations due to the existence of parasitic elements. In this paper, we introduce the turn-on and turn-off switching equivalent circuit models and validate these models with commercially available SiC MOSFETs. Based on the models, theoretical analysis...
Regarded as one of the most successful wide bandgap (WBG) devices, Silicon Carbide (SiC) metal-oxide-semiconductor field-transistors (MOSFETs) are being considered in an increasing number of power electronics applications. One of those applications is the hybrid and electric vehicle (HEV/EV) traction inverters where high-efficiency and high-power density is essential. From the system-level perspective,...
This paper presents a systematic study of the busbar design and optimization for SiC-based H-bridge power electronics building block (PEBB) used in high-frequency and high-power applications. Step-by-step guidelines are presented in which the design considerations and analysis are given. This paper presents a double-sided busbar concept to create a compact PEBB design with improved thermal and switching...
This paper presents a novel unipolar SPWM-oriented modulation for the isolated bi-directional DC-to-three-phase-AC converter with high-frequency-link (HFL) using SiC MOSFETs. The converter consists of a full bridge (FB) stage and a single-to-three-phase matrix converter with high frequency transformer isolation. Under the proposed modulation, zero voltage switching (ZVS) is realized for the full bridge...
From small voltage regulators to large motor drives, power electronics play a very important role in present day technology. The power electronics market is currently dominated by silicon based devices. However due to inherent limitations of silicon material they are approaching thermal limit in terms of high power and high temperature operation. Performance can only be improved with the development...
The 10–15kV SiC MOSFET and 15kV SiC IGBT (2 μm and 5 μm buffer layer) are the state of the art high voltage devices designed by Cree Inc. These devices are expected to increase the power density of converters and the demonstration of these devices in applications like Solid State Transformers (SST) have been reported up to 4.16 kV–13.2 kV grid connection. It is interesting to investigate the performance...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.