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This paper reports a 3.0 THz detector which can detect the terahertz wave radiated by a quantum cascade laser (QCL) working at pulse mode. The detector was implemented in a 65 nm silicon CMOS process. The chip size is 1.5×l.5 mm2 including bonding pads. THz detector using FET is based on plasma wave theory proposed by Dyakonov and Shur which allows detection of THz radiations far beyond the FET devices...
Driver circuits for small LCD (Liquid Crystal Display) are formed on the same glass substrate as LCD by means of TFTs (Thin Film Transistors), which is called SoG (System on Glass) technology. If the driver circuit is designed by nMOS transistor only, then production cost is reduced, because the pMOS process can be eliminated. In this paper, we propose a new nMOS 2-phase clock dynamic logic shift...
Adiabatic logic is an alternative architecture design style to reduce the power consumption of digital cores by using AC power supply instead of DC ones. The energy saving of the digital gates is strongly related to the efficiency of adiabatic AC power supplies. In this paper, we propose a resonant reversible power-clock supply design with four different phases. The resonance deviation between the...
In this paper we present the first fully integrated analog LDO (low dropout regulator) for sub-0.5V supply voltages. The LDO can operate from 0.3V-to-1.0V input voltage, and can sustain a load variation of 10mA-to-100mA at 1.0V input and 5mA-to-25mA at 0.3V input. It achieves a peak 99.1% current efficiency for a 100mA load at 0.9V output voltage. In order to realize the gate drive at sub-0.5V supply...
An AES core designed for low-cost and energy-efficient IoT security applications is fabricated in a 65nm CMOS technology. A novel Dual-Rail Flush Logic (DRFL) with switching-independent power profile is used to yield intrinsic resistance against Differential Power Analysis (DPA) attacks with minimum area and energy consumption. Measurement results show that this 0.048mm2 core achieves energy consumption...
The article issue is the enterprise information protection within the internet of things concept. The aim of research is to develop arrangements set to ensure secure enterprise IPv6 network operating. The object of research is the enterprise IPv6 network. The subject of research is modern switching equipment as a tool to ensure network protection. The research task is to prioritize functioning of...
Memristor is a two terminal passive circuit element that can be used in non-volatile storage applications. In addition, memristor can also be used to implement logic functions. This paper presents the design of adder circuits in memristor crossbar. We have used the MAGIC design style to implement the gates required for the adder circuits. The implementation is based on in-memory computing where the...
Operating CMOS circuits at subthreshold supply voltages is an attractive solution for substantial energy reduction, at the expense of strong timing performance degradation, for a broad range of battery operated appliances. One of the challenges of this approach in current technology nodes is the reduced available noise margin when operating at low supplies. This paper evaluates the Static Noise Margin...
Cell voltage equalizers are important for the batteries of electric vehicles and other energy storage systems in order not to be reduced their capacity. The authors have proposed a cell voltage equalizer using an LC series circuit; however, the equalizer requires a lot of bi-directional and multi-stage connected switching elements to equalize the voltage across each battery cell. This paper proposed...
This paper proposes and designs a switching cell using paralleled gallium nitride (GaN) high-electron-mobility transistor (HEMTs) in the minimized, symmetric power and gate loops. Based on the design, 1Ω gate resistor was successfully applied to speed up the switching transient. The switching cell can be easy to replace on the mother board thanks to the pluggable connector and the cell owns unique...
Gallium Nitride (GaN) based power devices have been demonstrated to deliver higher energy efficiency than their Silicon (Si) counterparts for 200–1.2kV rated applications. The benefits of GaN technologies and their market potential will be highlighted in this paper together with the main challenges that GaN-based power systems need to overcome to reach their full potential and finally enter the market...
Targeting the development of a silicon carbide (SiC) inverter for electric vehicle/hybrid electric vehicle (EV/HEV) applications, the design considerations of the gate driver for the adopted SiC metal-oxide-semiconductor field-transistor (MOSFET) power modules are presented. Given the system power density requirement, the gate driver design challenges for the commercial off-the-shelf (COTS) SiC modules...
This paper presents a comparative study on high-frequency active rectifier-based zero voltage soft-switching (ZVS) resonant dc-dc power converters with Gallium Nitride Heterojunction-Field-Effect-Transistor (GaN-HFET) for inductive power transfer (IPT) systems. The two types of active rectifiers, i.e. high-frequency bridgeless rectifier (BLREC) and totem-pole rectifier (TPREC) are adopted for the...
Although the hybrid switch consisting of high power Si IGBT and low power SiC MOSFET achieves reduction of losses and cost, there is a severe concern of its short-circuit capability due to its internal SiC MOSFET with small die size. Experimental study shows that the short-circuit capability of hybrid switch is limited by that of SiC MOSFET. The physical mechanism of short-circuit capability of SiC...
Bi-directional switches, also called four quadrant switches (FQS), are the basic building blocks in many power converter circuits, such as cyclo-converters, matrix converters etc. Conventional approaches to realize bi-directional switch involves combination of unidirectional controllable blocking device (IGBT or MOSFET) and diode. In this approach, current flows through multiple devices for any direction...
The advancements in wide-band-gap (WBG) devices are enabling applications of power electronics converters coupled directly to medium voltage and incorporating galvanic insulation within the converter using high-frequency solid-state transformers. This paper presents the design and the characterization results of a SiC H-bridge converter suitable for up to 100 kVA single-phase ac-dc modular solid-state...
This paper describes the effect of MOSFET internal capacitances on the channel current during the turn-on switching transition: an intrinsic theoretical switching speed limit is found and detailed mathematically. The set of analytical equations is solved and the effect of the displacement currents is highlighted with ideal simulated waveforms. A laboratory experiment is thus performed, in order to...
GaN-FETs are attractive switching devices for their fast switching capability. However, they often suffer from the oscillatory false triggering, i.e. a series of self-sustaining repetitive false triggering induced after a fast switching. The purpose of this paper is to derive a design instruction to prevent this phenomenon. According to the previous study, the oscillatory false triggering was found...
Z-source inverters (ZSIs), compared to the conventional two-stage architecture, embrace some interesting features, like the reduced size and complexity of the entire conversion system. Many research activities have been established to improve the performance of the so-called ZSI since it has been proposed in 2003, and several modifications have been introduced since then. These modifications include...
An edge-resonant soft-switching time-sharing (TS) multiple-input (MI) dc-dc converter is introduced in this paper. The proposed converter can achieve high efficiency with zero-current switching (ZCS) and zero-voltage switching (ZVS). The zero-current switching (ZCS) can be realized on switch turned-on states, and the zero-voltage switching (ZVS) can be realized on switch turned-off states. In addition,...
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