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Through silicon vias (TSVs) are arranged to form a rectangular resonant cavity to improve performance of silicon based antenna in this paper. On the basis of fundamental theory of rectangular resonant cavity, the model of cavity made of through silicon vias is analyzed. Considering the size of millimeter-wave antenna, the three dimensions of cavity for mode TE101 is calculated. Applying the resonant...
On the benefit of the deeply development of MEMS and inertial instrument technology, the novel micro technology for positioning, navigation and timing (μΡΝΤ) becomes the substitution of GPS technology, and is the one of the most popular research area. The μ PNT unit volume can be pressed obviously by employing 3D stack technology after MEMS components are finished, and through silicon vias (TSV) technology...
This paper focuses on the influence of annealing process on the properties and microstructural evolution of through-silicon-via electroplating copper. Particular attention is paid to the interposer-related through-silicon-via applications, which is fabricated by via-last process with the diameter of 20 microns and above. A interposer was designed and fabricated with its diameter of 100 microns and...
3D packaging using through silicon via (TSV) technology is becoming important in IC packaging industry. The polymer material as insulation material was fabricated by the spin-coating or spray-coating process. And the polymer insulation can relax some of the stress induced and makes the process more convenient compared with CVD. Therefore, it is the most cost effective technology for the wafer level...
Thermal wind sensor has been used to measure wind speed and direction in high temperature due to its principle. In this paper, a novel structure is proposed. It consists of a silicon sensing substrate and a ceramic chip for packaging, in which the sensing chip with through silicon vias (TSV) is Cu-Sn eutectic bonded to the ceramic. This paper focuses on the thermal-mechanical reliability of the novel...
The effect has been examined of Cu-Filled TSV under thermal shock test. The mismatch in the coefficients of thermal expansion between Cu metal and Silicon generates the thermal mechanical stress. The stress plays critical effect on the performance of the device structure and generates cracks. The Cu metal volume increase and separate from Si matrix after thermal shock test. The Cu metal drift can...
This paper proposes a procedure for estimating the location of open or short defects in a Through Silicon Via daisy-chain structure. The equivalent inductance and capacitance are extracted, at low frequency, through the measured and/or computed Z11 parameter of a three dimensional model in which the short and open defects are intentionally created in specific points.
Grain characteristics of copper filler have an important influence on physical properties of through silicon vias (TSVs) in three-dimensional (3D) packaging. Due to the mismatch of coefficients of thermal expansion (CTE) between the copper and silicon, there exist obvious thermal stresses when the TSV structure is bearing thermal load. However, the elastic response characteristics of copper can be...
This paper proposes implementing an antenna operating in the millimeter wave band of 56–64 GHz on the backside of an Integrated Circuit (IC) that uses Through Silicon Via (TSV) technology for a System in Package (SiP) approach to mixed signal design. A folded monopole antenna that utilizes a coaxial TSV feed line is selected to implement the design on the backside of the silicon die. Furthermore,...
Through silicon via (TSV) technology has attracted much attention as a key method to realize chip stacking and interposers interconnected of 3D packaging. Due to the thermal load during fabrication and operation of TSV structure, the thermal stress will be produced owing to the structural material high CTE mismatch, which may lead to the failure of the TSV structure. In the case of uneven thermal...
Non-volatile 3D FPGA research to date utilizes layer-by-layer stacking of 2D CMOS / RRAM circuits. On the other hand, vertically-composed 3D FPGA that integrates CMOS and RRAM circuits has eluded us, owing to the difficult requirement of highly customized regional doping and material insertion in 3D to build and route complementary p- and n-type transistors as well as resistive switches. In the layer-by-layer...
Three-dimensional (3D) ICs using TSVs are the most promising candidate for high performance and low power computing since they have lots of advantages such as short wiring length, small chip size, and small pin capacitances, as shown in Fig. 1 [1]. Until now, several kinds of 3D-ICs including image sensor chip, shared memory, and retinal prosthesis chip have been fabricated successfully.
State-of-the-art silicon interposer technology of chip-on-wafer-on-substrate (CoWoS®) has been applied for the first time in fabricating high performance wafer level system-in-package (WLSiP) containing the 2nd-generation high bandwidth memory (HBM2). An ultra-large Si interposer up to 1200 mm2 made by a two-mask stitching process is used to form the basis of the 2nd-generation CoWoS® (CoWoS®-2) to...
In 3D IC technology, Through Silicon Via (TSV) is the primary medium used to distribute power and signal between layers of chips. Placement of a large number of TSVs in close vicinity leads to performance degradation due to interferences and crosstalk. The core of a TSV is usually circular column shape. In this paper, different shape for the core of the TSV is investigated to find the best possible...
Silicon interposers are frequently used in memory and network processor systems to closely integrate multiple chips and improve the performance of high-speed systems. The proximity provided by silicon interposer greatly improves bandwidth, power, and latency by simplifying communication and clocking of the links. However, the design of silicon interposer systems poses new challenges in managing the...
Significant stress is induced in the crystalline Si area around a Cu-filled Through Silicon Via (TSV) due to the large mismatch in the co-efficient of thermal expansion (CTE) between Si and Cu. As a result, CMOS devices fabricated within the stressed Si region will show undesired variations in their electrical performance. This paper reports a novel method to isolate the TSV-induced stress from active...
Smaller footprint, thinner packages and simultaneously increased functionality are general requests for all electronic products and as well hold true for MEMS sensors. Current standard packaging technology for MEMS sensors is stacking the ASIC and MEMS silicon dies on a substrate. The sensitive dies are then either protected by over-molding or by attaching some sort of lid. Typical substrate materials...
A technological multi-chip module with a large silicon interposer has been designed, manufactured and characterized for space and airborne applications. It stands for a reconfigurable advanced calculation device, for up to 10 Gbps data rate. The electrical targets are propagation losses less than 2 dB at 5GHz for the signal path across the interposer and its bumps, signal integrity with enough eye...
In this work, the development of engineered silicon substrates for a novel via-middle TSV integration concept is demonstrated. These substrates include 3D buried etch-stop layers which provide both an ideal vertical and lateral etch-stop for TSV trench etching thus enabling the simultaneous realization of different size of TSVs on the same silicon substrate. Beside standard BiCMOS and TSV fabrication...
In this paper, the pumping behaviors of copper filler from TSV were systematically investigated. First, in-situ observation of copper pumping from TSV was conducted in scanning electronic microscope (SEM), the pumping height of copper filler and its evolution with time and temperature was recorded, it is found that the pumping rate increase with temperature and the maximum pumping height reached 12...
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