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Lanthanum (La), which has been used in recent works to tune the threshold voltage of HfSiO high-κ n-MOSFETs, is shown to introduce a new bulk degradation mechanism. Unlike the conventional charge trapping mechanism which exhibits low activation energy (~0.05 eV) and fast post-stress recovery, the La induced degradation mechanism is found to be relatively permanent and has higher activation energy...
In this work we present the time dependent dielectric breakdown (TDDB) characteristics of LaO capped HfO2 layers with an equivalent oxide thickness of 8Å̊. The layers show maximum operating voltages in excess of 1 V. Such high reliability can be attributed to very high Weibull slopes. We examine the origin of the high slopes by a detailed study of the evolution of the stress induced leakage current...
The impact of SiO2 interfacial layer (IL) thickness on the Positive Bias Temperature Instability (PBTI) is investigated for nMOSFETs with an IL/High-K/metal/poly-Si gate stack architecture. Results from extensive PBTI measurements using three different measurement methodologies consistently demonstrate that thickening the IL results in threshold voltage (VT) instability reduction and thus significantly...
The root cause for the increase in the TDDB voltage acceleration with decreasing stress voltage in metal gate/high-k n-channel FETs is investigated. Using DC and AC stress methodologies, the effect could be linked to charge trapping in the high-k gate dielectric. Furthermore, a correction for charge trapping is proposed, which results in a single power law voltage dependence for all stress conditions.
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
A new hole trap generation phenomenon during a positive bias stress in nMOS high-k transistors is reported. Fast transient hole trapping at the generated defects is manifested in a negative threshold voltage shift (DeltaVth) observed after the detrapping of electrons. The precursors of these hole traps are thought to be associated with the nitrogen species, which can be incorporated in the interfacial...
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