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In this paper, we report our recently developed large area 4H-SiC n-IGBTs that have a chip size of 1 cm2 and an active conducting area of 0.37 cm2. A blocking voltage of 22.6 kV has been demonstrated with a leakage current of 9 μA at a gate bias of 0 V at room-temperature. This is the highest breakdown voltage of a single MOS-controlled semiconductor switch reported to date. To improve the conductivity...
Junction barrier Schottky (JBS) rectifiers with p-well on 4H-SiC for improving the electrical performance are proposed. Compared with the common JBS rectifier, the devices show an increasing breakdown voltage due to a uniform electric field. Forward and reverse characteristics have been verified at room and elevated temperatures. As a result, the breakdown voltage of 1.9 kV was obtained for the JBS...
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