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We present WinATE, a new computer program to measure the electronic transport properties of materials with energy applications. The C++ program we describe here is designed with a user-friendly graphical interface to automate measurement. WinATE controls laboratory test and measurement equipment through a RS-232 serial interface. It was designed to measure electronic properties of synthesized materials...
A solar farm can be divided in three distinct areas: the substation, the inverter houses and the solar arrays. The interconnection of the grounding grids of these three areas constitutes an extended grounding system. The characteristics of this grounding system are unique to solar farms. There are different factors affecting the performance of this grounding system such as the electric resistivity...
The resistivity (doping level) in epitaxial and implant layers has high impact on electrical device parameters of power semiconductors. However, precise control of electrical layer resistivity with the four-point-probe (4PP) technique is still challenging due to the contact between semiconductor layers with metal probes. In this work, the repeatability of 4PP sheet resistance (Rs) measurement on epitaxial...
We present a study of Ti implanted Si layers with doses in the 1013-1016 cm-2 range that have been subsequently Pulsed-Laser Melted (PLM) at 0.8 J/cm-2. Recently, we have associated a rectifying electrical behavior found between the Ti implanted Si layers and the underlying substrate to the Intermediate Band (IB) formation in the Ti implanted Si layers with the highest doses. We analyze by means of...
The aim of this study is to optimize a low cost phosphorus diffusion process suitable for pn junction formation on extremely thin (<;100um) c-Si solar cells. The deposition of the doping layer has been carried out by spray coating of commercial and non-commercial precursors. There have been monitored sheet resistance, effective lifetime and oxygen content in the prepared emitters.
The effect of high pressure and high temperature on electrical resistivity behavior of (Nd, Eu, Gd) Ba-Cu-O superconductor with 10wt %Ag2O addition was studied. This high Tc superconductor was synthesized using the oxygen controlled melt growth process(OCMG). At room temperature, there was an initial drop in the resistivity of the superconductor up to 3GPa, followed by a nearly constant value up to...
The diffusion barrier properties of Co/TaN bilayer as Cu adhesion layer/diffusion barrier on the Si and low k (k = 2.5) substrates were investigated. The barrier was prepared by using ion-beam sputtering technique. The barrier property was investigated by sheet resistance, X-ray diffraction (XRD), and Auger electron spectroscopy (AES) and electrical measurements. No obvious Cu diffusion and agglomeration...
We report the hydrogen sensing properties of a sensor using TiO2 nanotube arrays. The TiO2 nanotube arrays were fabricated by anodization on titanium foil, in an electrolyte containing 0.5 wt% hydrofluoric acid mixed with water, the electric potential being 15V. TiO2 nanotube arrays were annealed at 600 Celsius for 1 h. The sensors were equipped with platinum electrodes. These two were connected with...
This paper reports measurements of the electrical resistance and resonant frequency of VO2-coated silicon dioxide (SiO2) bridges when the coating's insulator-to-metal transition (IMT) is thermally induced by conduction. The measurements of these two properties were done simultaneously. The decrease in electrical resistance was close to three orders in magnitude. The resonant frequency shift across...
A novel radiation detector based on a graphene field effect transistor (GFET) is experimentally demonstrated. The detection in GFET relies on the high sensitivity of the resistivity of graphene to the local change of electric field that can result from ionized charges produced in the underlying semiconductor substrate. We present the experimental results of our study on the graphene-based radiation...
Technological improvements have led to the development of low resistivity materials with higher surface which are capable of storing more energy in the form of electrical charge. These developments as well as a better theoretical understanding of the process of charge transfer, a process that appears in double layer type materials, led to the development of capacitors with high capacitance, known...
Platinum thin film layer's long-term stability, repeatability, fast response time, and wide temperature range make it a useful choice in many applications. As a result, platinum resistance temperature devices (RTD) are known as the most reliable standard available for temperature measurements. In this paper we focus on the pulsed stress behavior of the platinum thin film layer, used as a conductive...
A number of Pb-free BaTiO3 - Bi(Zn1/2Ti1/2)O3 solid solutions have been studied by Huang et al.. Compositions close to 0.8BaTiO3 - 0.2Bi(Zn1/2Ti1/2)O3 revealed pseudo-cubic symmetry and showed a linear dielectric response. The existence of a nearly flat temperature dependence of the relative permittivity over the temperature range of 100°C to 350°C was also obtained. In this study, the effects of...
Thermoelectric modules (TEMs) are solid-state devices used for cooling, heating and power generation. An experimental apparatus was developed to characterize the performance of a TEM and heat sink assembly, where the TEM is operated in refrigeration mode. A numerical model was developed to simulate the experiments. Bulk and interfacial Ohmic heating, along with Peltier and Thomson effects were modeled...
Strips of electrically conductive adhesive were printed on a test PCB. Strips were processed by a standard curing process and then aged at the temperature of 125 oC. One group of samples was aged in an oven; the second group was heated with current pulses of high intensity. Ageing was carried out 150 hours. The frequency, amplitude and pulse duty cycle were changed. The strip resistance was measured...
We fabricated a carbon nanotube based gas sensor for the detection of CO and NH3 mixed gas. Conventional photolithography technology was applied for the localization of sensing materials and the sensor fabrication. Single walled carbon nanotubes were dispersed in Sodium Dodecyl Sulfate (SDS) solution. The whole surface was covered by a photoresist except window areas between two electrodes. Carbon...
The electrical characterization of fine-pitch compliant Au bumps is investigated in this study. Compliant Au bumps of 20 microns pitch were fabricated on a glass substrate for chip-on-glass application. Kelvin probes are fabricated and employed to measure the bump resistance. The resistance ranges from 1.0 to 4.5 ohms, depending on process parameters. Current-carrying capability for these bumps is...
Thin film Ti/Pt heaters and temperature sensors were designed and fabricated to provide controlled heating of meandered microchannels realized on the opposite side of the Si platform. Ti/Pt heaters and temperature sensors were fabricated simultaneously by DC sputtering on SiO2/Si substrate. Annealing temperature in the range 400-700??C was found to influence significantly the sheet resistance and...
The introduction of millisecond annealing in advanced CMOS process flows turns out to generate considerable temperature variations which can enhance the device dispersion. In the present work we report on the use of inline Therma-Probe (TP) and Micro Four-Point Probe (M4PP) metrology to assess these temperature variations on shallow trench isolation (STI) wafers with and without absorber layer after...
Measurements of thermoelectric power (??) and electrical resistivity (??) were made at room temperature on filamentary samples of CuInSe2 (stoichiometric) and CuInSe2.2 (excess Se), Bridgman-grown with added elemental sodium in the melt in the amounts of 0, 0.1, 0.2, 0.5, 1, 2 and 3 at. %. In the CuInSe2 + Na samples, conversion from p- to n-type occurred between 0.2 and 0.5 at. % Na, yielding electron...
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