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The threshold switching characteristics of amorphous NbOx thin films is investigated with particular emphasis on temperature dependence of the switching characteristics. Threshold switching in this material is believed to result from a thermally-induced insulator-metal-transition (IMT) induced along a filamentary path by local Joule heating. Increasing the operating temperature is shown to lead to...
The resistive switching (RS) effect is among the leading future non-volatile memory technologies; however, its implementation is hampered by the lack of full understanding of the switching and conduction mechanism. The switching is generally attributed to the formation and rupture of conductive filaments in the oxide, which are generated by temperature-enhanced nano-ionic and thermal effects. One...
This paper presents a detailed comparative study of the switching characteristics of resistive memory devices, with NiO or HfO2 active materials and Pt electrodes, based on identical integration schemes. Material screening and qualification are performed using structural and composition analyses. Preliminary electrical investigations outline the non-polar switching behavior of both HfO2 and NiO devices...
In that work, we show that RF magnetron sputtering can be used to obtain pure and crystallized thin layers of GaV4S8 films with a well controlled composition, depending mainly on RF power and deposition pressure. The obtained layers exhibit similar structural and physical properties as GaV4S8 polycrystal or crystal. In addition, we have successfully demonstrated that a reversible resistive switching...
This paper demonstrates the efficiency of a new methodology using a commercial nanoindenter coupling with electrical measurement on test vehicles specially designed to investigate the micro contact reliability. This study examines the response of gold contacts with 5 mum2 square bumps under various levels of current flowing through contact asperities. Contact temperature rising is observed leading...
The electrical properties of thin film SiNx that has been deposited with PECVD method at 150°C and 250°C are investigated on evaporated and electroplated Au substrates. The aim is to extract the parameters that can be introduced in modeling and simulation tools for MEMS design. The present work provides information on the dielectric charging and its dependence on the film thickness,...
A physical yet analytical phase change memory (PCM) model simultaneously accounting for thermal and electrical conductivities is presented. Due to the physics based nature of the model, the essential temperature from heating and cooling of PCM during operation is instantaneously updated. More importantly, the model can be applied to non-conventional circuit design technique. We show that for the first...
We report thermoelectric characterization of Bi2-xSbxTe3 (x = 0.5, 1.0, and 1.5) synthesized by a solvothermal method using DMF as solvent. For Bi2Te3, the size of the edge and thickness of the hexagonal nanoplatelets are 200-250 nm and 20-25 nm, respectively. Bi2Te3 nanosheets appear to grow epitaxially from the surface of the Te tubes, which forms in the first step and acts as the template for the...
Operation regimes of modern power semiconductor devices (such as IGCT thyristors or IGBT transistors) are characterized by switching high currents of the order of kA at the voltage level of several kV. Although their internal and eventual contact resistances are very low, the Joule losses in them reach quite high values and corresponding heat may lead to unacceptable (local or global) temperature...
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