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In this paper, junction temperature behavior of Si power MOSFET and SiC diodes when conducting significant current is investigated in detail by experiment and theoretical analysis. The dynamic variation and steady-state values of device junction temperatures when carrying different currents are studied. The results show that the device steady-state junction temperature versus current curve rises sharply...
novel architecture of DMG ISE SON MOSFET has been proposed and shown to have a commendable potential to become ultimate device architecture for ULSI era owing to its greater resistance toward self heating effect and with its high performance in terms of S, DIBL and current drivability. The improvement in SCEs is further seen for DMG ISE SON MOSFET with thin channel film.
Two dimensional numerical simulation of nanoscaled selective buried oxide (SELBOX) based MOSFET is performed. In this device an opening is provided under the device channel in the buried oxide (BOX). A comparative analysis of the SELBOX, bulk and SOI (Silicon-on-Insulator) devices for various performance measuring parameters has been done. The simulation study has revealed that by properly choosing...
A non-classical device structure namely self-aligned quasi-silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) field-effect transistor with pi-shaped semiconductor conductive layer (SA-piFET) is presented, seeking to improve the performance and upgrade the reliability of the SOI-based devices. Designed to equip with a SA single crystal silicon channel layer, plus a natural source/drain (S/D)...
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