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We present a Monte Carlo simulation tool to address phonon transport in silicon and silica by solving the Boltzmann Transport Equation. This tool aims to provide useful data for thermal microscopy at nanoscale where samples and tips may be of various size and shape. It enables also to predict the effect of an oxide layer or interface between similar materials. Especially, we compute the thermal conductance...
Two numerical simulation techniques are presented to investigate the heating issues in nanoscale Si devices. The first one is the Monte Carlo simulation for both electron and phonon transport, and the transient electrothermal analysis is carrier out in n+-n-n+ device with the n-layer length of 10 nm. The second is the molecular dynamics approach for simulating the atomic thermal vibration in the nanoscale...
A series of molecular dynamics (MD) simulations is conducted to investigate the dynamics of longitudinal optical (LO) phonon in Si nano-structure confined with oxide films. This work is motivated by heat issues in nanoscopic devices; it is considered that the LO phonons with low group velocity are accumulated in the nanoscopic device and the electric property deteriorates. We estimate the relaxation...
In this work we focus on investigation of self-heating effect in 10 nm wide, 7 nm thick and 10 nm long channel of a silicon nanowire transistor, shown in Fig. 1. The difference between this structure and the previously investigated 2D fully depleted SOI transistors is that the SiO2 is now all around the structure, not just at the top and the bottom. Because SiO2 has very low thermal conductivity,...
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