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Compressively strained GeSn alloys grown on Ge buffers on Si (001) substrates were fabricated into microdisks and strained using silicon nitride stressors. The strained disks are measured to be tensile by Raman spectroscopy, and demonstrate direct bandgap emission in the 3–5 μm gas sensing window.
GeSn-based optically pumped lasers and photoconductors have been systematically investigated. The operation wavelength of these devices covers 2–3 μm. Since GeSn technique is fully compatible with current CMOS process, the GeSn-based devices can be widely used in the area of Si integrated photonics.
The decades long development in shrinking footprint and improving performance of photonics integrated circuits has seemingly slowed down in recent years, posing problems in e g interconnects in data centers with their ever increasing power requirements. Thus, routes to a continued development towards smaller footprint, lower power, higher performance integrated nanophotonics will be presented and...
The electronic band structure, and in particular the band gap directness, of binary and ternary SiGeSn alloys are first reviewed, and different aspects of their optoelectronic and microelectronic applications discussed, and the computational analysis is then extended to the dilute carbon-containing alloys.
Ge is an indirect band gap material. The band structure of Ge is a strong function of strain and alloy composition, and a transition from an indirect to a direct band gap has been observed for y∼6–10% for relaxed Ge1_ySny indicating the possibility of widespread applications of Ge-based photonic devices. The pseudomorphic nature of the Ge-based alloy layer on a substrate is important to keep dislocation...
Recent experimental demonstration of Perovskite/Si tandem cell has created new possibilities for next generation low cost and high efficiency solar cells. Proper theoretical analysis is required to get optimized performance from such cells. In this paper, we present a theoretical modeling framework for monolithic two terminal Perovskite/Si tandem solar cells. The model for each cell is chosen such...
CMOS compatible photonic integrated circuits have gained great attentions in short haul interconnects applications because of the promises to tackle the issues of traditional copper interconnects. Towards the monolithic integration of electronics and photonics, lots of efforts have been made to decrease the device footprint by using surface plasmon polaritons (SPPs), in order to enhance performances...
Silicon-based integrated photonics became a very attractive technology for guiding and manipulating of light in highly integrated structures due to the large index contrast between silicon and cladding materials allowing for very high mode confinement. Moreover, these structures can be realized by conventional planar CMOS techniques. Different passive devices based on Si nanowire waveguides have been...
Integrated nanophotonics has shown a remarkable development in recent years and can find applications in virtually all fields of photonics, though its predominant focus has so far been in telecom and lately computer interconnects. This progress has primarily been based on nano- and III–V technology development, the introduction of silicon technology, with larger refractive index contrast than previously...
In anticipation of a possible future breakthrough in developing metamaterials with at least a factor of 10 lower losses we analyze in this paper different resonant and nonresonant structures and the achievable performance. One example is waveguides made from arrays of near resonantly operated near-field coupled metal nanoparticles in the shape of e.g. spheres, which have attracted some attention....
The concomitant effects of the gain compensating loss process in a an optical waveguide are increased dissipation and signal to noise ratio degradation.This power dissipation is primarily due to the dissipative losses of the metal structures and Auger recombination in the quantum dots. The impact of amplifier mediated signal to noise ratio degradation and its effect on integration leads to a trade...
Depth-resolved IR photoemission microscopy was applied for localization of defects causing leakage currents within Through Si Vias (TSVs). Specifically, analyses of the changes in intensity and spatial distribution of the detected emission, as a function of the focal plane position, allow quantification of the depth of defects within the TSV. Physical failure analysis verified the presence of the...
We describe a wafer analysis methodology which uses test data, emission data and CAD data to accurately predict the location and type of defect. The methodology described enabled us to know the location with metal layer information and type of defect before performing destructive physical analysis.
Group IV elements and their alloys show poor light emission due to their indirect gap. Application of tensile strain in Ge lowers the ?? valley below the L valleys in bulk as well as in Ge nanowires. We present also our results on direct gap type I alignment showing direct gap at ~ 0.8 eV in Si1-p-qGep Cq (C <4%) active layers with Ge1-x-ySixSny as the barrier. We have chosen a composition to give...
Application of tensile strain in Ge lowers the G valley below the L valleys but the direct gap is reduced from the value in unstrained Ge. We considered Ge1-qCq (C <4%) active layers with Ge1-x-ySixSny as the barrier and estimated the range of compositions in the active and barrier layers to yield direct gap (~0.8 eV) type I alignment by using model solid theory. We have chosen a composition to...
This paper reviews recent experimental confirmations that the intrinsic radiation robustness of commercial CMOS technologies naturally improves with the down-scaling. When additionally using innovative design techniques, it becomes now possible to assure that performance and radiation-hardness are both met. An illustration is given with an original nano-power and radiation-hardened 8 Mb SRAM designed...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
Active photonic devices like efficient light emitters and high speed modulators using Si and other group IV materials are difficult to realize due to indirect nature of band gap in silicon, germanium and their alloys. At present, efficient light emission has been observed by exploiting stimulated Raman scattering in silicon that needs optical pumping. An alternate route has been found recently that...
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