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With continuous scaling of transistors in each technology generation, NBTI and Process Variation (PV) have become very important silicon reliability problems for the micro processor industry. In this paper, we develop an analytical model to capture the impact of NBTI in the presence of PV for use in architecture simulations. We capture the following aspects in the model: i) variation in NBTI related...
A general framework is proposed to characterize digital library gates for NBTI and HCI ageing effects. Required parameters extraction is demonstrated for practical cases using accurate, state-of-the-art reliability simulation flow. Both NBTI recovery and HCI models are required to accurately assess digital product degradation.
A unified FinFET reliability model including high K stack dynamic threshold (HKSDT), hot carrier injection (HCI), and negative bias temperature instability (NBTI) has been developed and verified by experimental data. The FinFET-based circuit performances are simulated and compared under these reliability issues by HSPICE simulator after the inclusion of the presented model.
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